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Volumn 917, Issue , 2006, Pages 43-48

Thermal stability of Ru gate electrode on HfSiO dielectric

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC FILMS; HAFNIUM COMPOUNDS; HEAT TREATMENT; SECONDARY ION MASS SPECTROMETRY; THERMODYNAMIC STABILITY;

EID: 33846053416     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0917-e05-02     Document Type: Conference Paper
Times cited : (1)

References (10)
  • 6
    • 33947674535 scopus 로고    scopus 로고
    • D. Shamiryan, V. Paraschiv, M. Claes, W. Boullart, in Defects in High-κ Gate Dielectric Stack, edited by E. Gusev (NATO Science Series, Springer, Netherlands, 2006), p. 331.
    • D. Shamiryan, V. Paraschiv, M. Claes, W. Boullart, in Defects in High-κ Gate Dielectric Stack, edited by E. Gusev (NATO Science Series, Springer, Netherlands, 2006), p. 331.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.