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Volumn 917, Issue , 2006, Pages 43-48
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Thermal stability of Ru gate electrode on HfSiO dielectric
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC LAYER DEPOSITION;
DIELECTRIC FILMS;
HAFNIUM COMPOUNDS;
HEAT TREATMENT;
SECONDARY ION MASS SPECTROMETRY;
THERMODYNAMIC STABILITY;
CAPACITANCE-VOLTAGE MEASUREMENTS;
ENERGY-BAND ALIGNEMENT;
GATE ELECTRODES;
X-RAY PHOTOEMISSION SPECTROSCOPY;
GATE DIELECTRICS;
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EID: 33846053416
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-0917-e05-02 Document Type: Conference Paper |
Times cited : (1)
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References (10)
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