Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain

Materials Research Society Symposium Proceedings

Volumn 913, Issue , 2006, Pages 59-64

  Lee, Rinus Tek Po ^a   Liow, Tsung Yang ^a   Tan, Kian Ming ^a   Ang, Kah Wee ^a   Chui, King Jien ^a   Guo, Qiang Lo ^b   Samudra, Ganesh ^a   Chi, Dong Zhi ^c   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; NICKEL; PLATINUM; STRAIN;

DEVICE INTEGRATION; SILICIDATION; SOURCE/DRAIN (S/D) MATERIAL; STRAIN ENGINEERING;

MOSFET DEVICES;

EID: 33846053199     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0913-d02-04     Document Type: Conference Paper

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