A study of surface modification at semiconducting Ga2O3 thin film sensors for enhancement of the sensitivity and selectivity

Sensors and Actuators, B: Chemical

Volumn 36, Issue 1-3, 1996, Pages 290-296

  Fleischer, M ^a   Seth, M ^b   Kohl, C D ^b   Meixner, H ^a  

^a SIEMENS AG   (Germany)

^b JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

Ga2o3 thin film sensors; Selectivity; Sensitivity; Surface modification

Indexed keywords

ANNEALING; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTERING; SURFACE TREATMENT; TEMPERATURE; THERMODYNAMIC STABILITY; THIN FILMS;

GALLIUM OXIDE; SELECTIVITY ENHANCEMENT; SENSITIVITY ENHANCEMENT;

CHEMICAL SENSORS;

EID: 0030258510     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(97)80084-6     Document Type: Article

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