Analysis of GOI-MOSFET with high-k gate dielectric and metal gate fabricated by Ge condensation technique

Surface and Interface Analysis

Volumn 38, Issue 12-13, 2006, Pages 1720-1724

  Park, Mungi ^a,b   Bea, Jicheol ^a   Fukushima, Takafumi ^a   Koyanagi, Mitsumasa ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Germanium on insulator; High k dielectric; Metal gate

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); PERMITTIVITY; SEMICONDUCTING GERMANIUM; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; WSI CIRCUITS;

EQUIVALENT OXIDE THICKNESS (EOT); GERMANIUM-ON-INSULATOR (GOI) WAFER; METAL GATES; THERMALLY STABLE GATE DIELECTRICS;

MOSFET DEVICES;

EID: 33845945258     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2434     Document Type: Conference Paper

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