Flash lamp annealing vs rapid thermal and furnace annealing for optimized metal-oxide-silicon-based light-emitting diodes

Electrochemical and Solid-State Letters

Volumn 10, Issue 2, 2007, Pages

  Prucnal, S ^a   Sun, J M ^a   Muecklich, A ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTROLUMINESCENCE; FURNACES; ION IMPLANTATION; MOS DEVICES; RAPID THERMAL ANNEALING; SILICA;

ANNEALING TEMPERATURE; DEFECT FORMATION; ELECTRICAL STABILITY; FLASH LAMP ANNEALING (FLA);

LIGHT EMITTING DIODES;

EID: 33845942179     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2404225     Document Type: Article

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