Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 254, Issue 1, 2007, Pages 139-142

  Mathiot, Daniel ^a   Perego, Michele ^b   Fanciulli, Marco ^b   Assayag, Gérard Ben ^c  

^a UNIVERSITÉ DE STRASBOURG   (France)

^b LABORATORIO MDM   (Italy)

^c CEMES CNRS   (France)

Author keywords

Diffusion; Ion implantation; Nanocrystals; SiO2

Indexed keywords

DIFFUSION; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; SILICA; THERMAL EFFECTS;

DIFFUSION ENHANCEMENT; NANOCRYSTALS; THERMAL OXIDES;

DOSIMETRY;

EID: 33845675691     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.077     Document Type: Article

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