Reservoir effect and the role of low current density regions on electromigration lifetimes in copper interconnects

Journal of Materials Research

Volumn 21, Issue 9, 2006, Pages 2241-2245

  Gan, Z H ^a   Shao, W ^a   Mhaisalkar, S G ^a   Chen, Z ^a   Li, Hongyu ^b   Tu, K N ^c   Gusak, A M ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d CHERKASY NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER INTERCONNECTS; MEDIAN-TIME-TO-FAILURE; RESERVOIR EFFECT;

AGGLOMERATION; CURRENT DENSITY; ELECTROMIGRATION; FAILURE ANALYSIS; NUCLEATION;

INTERFACES (MATERIALS);

EID: 33845643419     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0270     Document Type: Article

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