Total angular momentum conservation during tunnelling through semiconductor barriers

Europhysics Letters

Volumn 74, Issue 5, 2006, Pages 882-888

  Gennser, U ^a   Scheinert, M ^b   Diehl, L ^b,c   Tsujino, S ^b   Borak, A ^b   Falub, C V ^b   Grutzmacher D ^b   Weber, A ^b   Maude, D K ^d   Scalari, G ^e   Campidelli, Y ^f   Kermarrec, O ^f   Bensahel, D ^f  

^a CNRS LPN   (France)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c HARVARD UNIVERSITY   (United States)

^d CNRS   (France)

^e UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^f STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33745055560     PISSN: 02955075     EISSN: 12864854     Source Type: Journal    
DOI: 10.1209/epl/i2006-10042-8     Document Type: Article

References (24)

1. PRINZ G., Science, 282 (1998) 1660.
2. WOLF S. A. et al., Science, 294 (2001) 1488.
3. HALL K. C. et al., Appl. Phys. Lett., 83 (2003) 2973.
4. GLAZOV M. M. et al., cond-mat/0406191 (2004).
5. DRESSELHAUS G., Phys. Rev., 100 (1955) 580.
6. MALCHER F., LOMMER G. and RŒSSLER U., Superlatt. Microstruct., 2 (1986) 267.
7. BYCHKOV Y. and RASHBA E., JETP Lett., 39 (1984) 78.
8. LUTTINGER J. M. and KOHN W., Phys. Rev., 97 (1965) 869.
9. MENDEZ E. E., WANG W. I., RICCO B. and ESAKI L., Appl. Phys. Lett., 47 (1985) 415.
10. LIU H. C., LANDHEER D., BUCHANAN M. and HOUGHTON D. C., Appl. Phys. Lett., 52 (1988) 1809.
11. LEWIS R. M., WEI H. P., LIN S. Y. and KLEM J. F., Appl. Phys. Lett., 77 (2000) 2722.
12. HAYDEN R. K., MAUDE D. K., EAVES L., VALADARES E. C., HENINI M., SHEARD F. W., HUGHES O. H., PORTAL J. C. and CURY L., Phys. Rev. Lett., 66 (1991) 1749.
13. SCHUBERTH G., ABSTREITER G., GORNIK E., SCHÄFFLER F. and LUY J. F., Phys. Rev. B, 43 (1991) 2280.
14. GENNSER U., KESAN V. P., SYPHERS D. A., SMITH III T. P., IYER S. S. and YANG E. S., Phys. Rev. Lett., 67 (1991) 3828.
15. ZASLAVSKY A., SMITH III T. P., GRÜTZMACHER D. A., LIN S. Y., SEDGWICK T. O. and SYPHERS D. A., Phys. Rev. B, 47 (1993) 15112.
16. DIEHL L., SIGG H., DEHLINGER G., GRÜTZMACHER D., MÜLLER E., GENNSER U., SAGNES I., FROMHERTZ T., CAMPIDELLI Y., KERMARREC O., BENSAHEL D. and FAIST J., Appl. Phys. Lett., 80 (2002) 3274.
17. HAYDEN R. K. et al., Semicond. Sci. Technol., 7 (1992) B413.
18. MARZIN J.-Y. and GÉRARD J.-M., Phys. Rev. Lett., 62 (1989) 2172.
19. GASSOT P., GENNSER U., ZASLAVSKY A., GRÜTZMACHER D. and PORTAL J. C., Physica E, 2 (1998) 758.
20. LUTTINGER J. M., Phys. Rev., 102 (1956) 1030.
21. The value depends on the interpolation used between Si and Ge. See WINKLER R., MERKLER M., DARNHOFER T. and RÖSSLER U., Phys. Rev. B, 53 (1996) 10858.
22. DIETL T. et al., Science, 287 (2000) 1019.
23. MATTANA R. et al., Phys. Rev. Lett., 90 (2003) 166601.
24. GENNSER U., DIEHL L., BORAK A., FALUB C. V., SIGG H., GRÜTZMACHER D., FAIST J., MAUDE D. K., SAGNES I., CAMPIDELLI Y., KERMARREC O. and BENSAHEL D., Future Trends in Microelectronics, edited by LYURI S., XU J. and ZASLAVSKY A. (Wiley-IEEE Press) 2004.