Intra-valence-band mixing in strain-compensated SiGe quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 15, 2005, Pages

  Tsujino, S ^a   Borak, A ^a   Falub, C ^a   Fromherz, T ^b   Diehl, L ^a,c   Sigg, H ^a   Grutzmacher D ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29644439108     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.153315     Document Type: Article

References (23)

1. B. F. Levine, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.354252 74, R1 (1993).
2. G. Dehlinger, Science SCIEAS 0036-8075 10.1126/science.290.5500.2277 290, 2277 (2000).
3. A. Borak, in Group-IV Semiconductor Nanostructures, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172 No. 832, edited by, L. Tsybeskov, (Materials Research Society, Warrendale, PA, 2005).
4. R. J. Warburton, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett. 80.2185 80, 2185 (1998).
5. U. Gennser, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.67.3828 67, 3828 (1991).
6. R. K. Hayden, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.66. 1749 66, 1749 (1991).
7. Y. C. Chung, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.88. 126802 88, 126802 (2002).
8. U. Gennser, cond-mat/0501212 (unpublished).
9. T. Fromherz, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.50.15073 50, 15073 (1994).
10. M. El kurdi, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.165333 68, 165333 (2000).
11. C. G. Van de Walle, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.39. 1871 39, 1871 (1989).
12. L. Diehl, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1476723 80, 3274 (2002).
13. S. Tsujino, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1695102 84, 2829 (2004).
14. T. Fromherz, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1997292 98, 044501 (2005).
15. C. G. Van de Walle, in Properties of Silicon Germanium and SiGe:Carbon, edited by, E. Kasper, and, K. Lyutovich, (INSPEC, London, 2000), Chap., p. 135.
16. R. Winkler, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.53.10858 53, 10858 (1996).
17. J. M. Luttinger and W. Kohn, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.97.869 97, 869 (1955).
18. R. C. Miller, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.32.8452 32, 8452 (1985).
19. G. Rau, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.60.1900 60, 1900 (1999).
20. The effective mass of 0.18 m0 for HH1 state is used here (m0 is the free electron mass) (see Ref.).
21. D. Huang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.14126 52, 14126 (1995).
22. D. C. Larrabee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1626264 83, 3936 (2003).
23. S. Tsujino, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1862344 86, 062113 (2005).