Toward silicon-based lasers for terahertz sources

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 6, 2006, Pages 1570-1577

  Lynch, Stephen A ^a,b   Paul, Douglas J ^a,b   Townsend, Paul ^a,b   Matmon, Guy ^a,b   Suet, Zhang ^a,b   Kelsall, Robert W ^c   Ikonic, Zoran ^c   Harrison, Paul ^c   Zhang, Jing ^d   Norris, David J ^e   Cullis, Anthony G ^e   Pidgeon, Carl R ^f   Murzyn, Pawel ^f   Murdin, Ben ^g   Bain, Mike ^h   Gamble, Harry S ^h   Zhao, Ming ⁱ   Ni, Wei Xin ⁱ  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF LEEDS   (United Kingdom)

^d IMPERIAL COLLEGE LONDON   (United Kingdom)

^e UNIVERSITY OF SHEFFIELD   (United Kingdom)

^f HERIOT WATT UNIVERSITY   (United Kingdom)

^g UNIVERSITY OF SURREY   (United Kingdom)

^h QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

ⁱ LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Boron; Far infrared; Germanium; Impurity; Lifetime; Phosphorus; Pump probe; Quantum cascade laser; Resonant tunneling diode (RTD); Silicon; Suicide; Terahertz; Waveguide

Indexed keywords

FAR INFRARED; LIFETIME; PUMP-PROBE; QUANTUM CASCADE LASERS; RESONANT TUNNELING DIODES (RTD); SUICIDE;

BORON; ELECTRON TUNNELING; GERMANIUM; PHOSPHORUS; QUANTUM THEORY; SILICON;

SEMICONDUCTOR LASERS;

EID: 33845609559     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2006.884069     Document Type: Article

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