Terahertz electroluminescence from boron-doped silicon devices

Applied Physics Letters

Volumn 83, Issue 9, 2003, Pages 1713-1715

  Adam, T N ^a   Troeger, R T ^a   Ray, S K ^a   Lv, P C ^a   Kolodzey, J ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; INTEGRATED CIRCUITS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

TERAHERTZ EMISSION;

SEMICONDUCTING SILICON;

EID: 0141716885     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1605263     Document Type: Article

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