Resonant tunneling in Si-SiGe superlattices on relaxed buffer substrates

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 377-381

  Tsujino, S ^a   Mentese, S ^a   Diehl, L ^a   Muller E ^a   Haas, B ^a   Bachle D ^a   Stutz, S ^a   Grutzmacher D ^a   Campidelli, Y ^b   Kermarrec, O ^b   Bensahel, D ^b  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b STMICROELECTRONICS   (France)

Author keywords

Quantum cascade lasers; Resonant tunneling; Silicon germanium; Superlattice

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC FIELDS; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; GROUND STATE; MOLECULAR BEAM EPITAXY; RESONANT TUNNELING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM CASCADE LASERS; SILICON-GERMANIUM;

SEMICONDUCTOR SUPERLATTICES;

EID: 10744227450     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.092     Document Type: Conference Paper

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