Co-sputtered amorphous NbxSi1-x barriers for Josephson-junction circuits

IEEE Transactions on Applied Superconductivity

Volumn 16, Issue 4, 2006, Pages 1966-1970

  Back, Burm ^b   Dresselhaus, Paul D ^b   Benz, Samuel P ^a,b  

^a IEEE

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Amorphous alloy; Josephson arrays; Metal insulator transition; Superconducting devices; Thin film devices

Indexed keywords

AMORPHOUS ALLOYS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ETCHING; JOSEPHSON JUNCTION DEVICES; METAL INSULATOR TRANSITION; SPUTTERING; SUPERCONDUCTING DEVICES; SUPERCONDUCTIVITY; THIN FILM DEVICES;

BARRIER RESISTIVITY; HIGH SPEED SUPERCONDUCTIVE ELECTRONICS; JOSEPHSON JUNCTION ARRAY CIRCUITS; JOSEPHSON VOLTAGE STANDARDS;

NIOBIUM COMPOUNDS;

EID: 33845530164     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/TASC.2006.881816     Document Type: Article

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