Electrical properties of Nb-Mo Si2 -Nb Josephson junctions

Applied Physics Letters

Volumn 86, Issue 23, 2005, Pages 1-3

  Chong, Yonuk ^a,b   Dresselhaus, P D ^a   Benz, S P ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER THICKNESS; FERMI VELOCITY; INTEGRATED JOSEPHSON CIRCUITS; RESISTIVELY SHUNTED JUNCTION (RSJ);

BOUNDARY CONDITIONS; CURRENT DENSITY; ELECTRIC POTENTIAL; ENERGY GAP; MATHEMATICAL MODELS; NIOBIUM ALLOYS; SQUIDS; SUPERCONDUCTING MATERIALS;

JOSEPHSON JUNCTION DEVICES;

EID: 21244444282     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1947386     Document Type: Article

References (15)

1. P. G. de Gennes, Superconductivity of Metals and Alloys (W. A. Benjamin, New York, 1966).
2. J. Clarke, Proc. R. Soc. London, Ser. A 308, 447 (1969).
3. K. A. Delin and A. W. Kleinsasser, Supercond. Sci. Technol. 9, 227 (1996).
4. S. P. Benz, Appl. Phys. Lett. 67, 2714 (1995).
5. Y. Chong, P. D. Dresselhaus, S. P. Benz, and J. E. Bonevich, Appl. Phys. Lett. 82, 2467 (2003).
6. The interface resistance times the area, RB, was extrapolated from the junction resistance Rn times the junction area vs the barrier thickness d plot. This only gives the upper limit of the contribution from the interface. RB is estimated to be < 10-10 Ω cm2.
7. Y. Chong, C. J. Burroughs, P. D. Dresselhaus, N. Hadacek, H. Yamamori, and S. P. Benz, IEEE Trans. Instrum. Meas. 54, 616 (2005).
8. Y. Chong, C. J. Burroughs, P. D. Dresselhaus, N. Hadacek, H. Yamamori, and S. P. Benz, IEEE Trans. Appl. Supercond. (to be published).
9. P. D. Dresselhaus, Y. Chong, J. H. Plantenberg, and S. P. Benz, IEEE Trans. Appl. Supercond. 13, 930 (2003).
10. P. G. de Gennes, Rev. Mod. Phys. 36, 225 (1964).
11. K. K. Likharev, Rev. Mod. Phys. 51, 101 (1979).
12. This value differs from the previous estimation [Chong et al., Appl. Phys. Lett. 82, 2467 (2003)] by ∼10% because we have carefully recalibrated the barrier deposition rate to be 17.6 nmmin instead of 19.7 nmmin used before. This does not qualitatively affect any of the previous results, but the thickness scales of Mo Si2 in Chong et al. should be multiplied by 0.9.
13. R. L. Kautz, J. Appl. Phys. 78, 5811 (1995).
14. T. P. Orlando and K. A. Delin, Foundations of Applied Superconductivity (Addison-Wesley, Reading, MA, 1991).
15. M. Y. Kupriyanov and V. F. Lukichev, Sov. Phys. JETP 67, 1163 (1988).