Dependence of excess bismuth content in precursor sols on ferroelectric and dielectric properties of Bi 3.25 La 0.75 Ti 3 O 12 thin films fabricated by chemical solution deposition

Applied Surface Science

Volumn 253, Issue 2, 2006, Pages 417-420

  Zhong, X L ^a   Wang, J B ^a   Yang, S X ^a   Zhou, Y C ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

BLT thin films; Dielectric properties; Excess bismuth content; Ferroelectric properties

Indexed keywords

DEPOSITION; ELECTRIC FIELDS; FERROELECTRICITY; PERMITTIVITY; POLARIZATION; SOLS; THIN FILMS;

BLT THIN FILMS; CAPACITANCE TUNABILITY; CHEMICAL SOLUTION DEPOSITION (CSD); EXCESS BISMUTH CONTENT;

BISMUTH COMPOUNDS;

EID: 33845463624     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.12.034     Document Type: Article

References (20)

1. Scott J.F., and Paz de Araujo C.A. Science 246 (1989) 1400
2. Duiker H.M., Beale P.D., Scott J.F., Paz de Araujo C.A., Melnick B.M., Cuchiaro J.D., and McMillan L.D. J. Appl. Phys. 68 (1990) 5783
3. Warren W.L., Tuttle B.A., and Dimos D. Appl. Phys. Lett. 67 (1995) 1426
4. Ramesh R., Lee J., Sands T., Keramidas V.G., and Auciello O. Appl. Phys. Lett. 64 (1994) 2511
5. Al-Shareef H.N., Bellur K.R., Kingon A.I., and Auciello O. Appl. Phys. Lett. 66 (1995) 239
6. Paz de Araujo C.A., Cuchiaro J.D., McMillan L.D., Scott M.C., and Scott J.F. Nature (London) 374 (1995) 627
7. Park B.H., Kang B.S., Bu S.D., Noh T.W., Lee J., and Jo W. Nature (London) 401 (1999) 682
8. Lettieri J., Zurbuchen M.A., Jia Y., Schlom D.G., Streiffer S.K., and Hawley M.E. Appl. Phys. Lett. 76 (2000) 2937
9. Lee H.N., Visinoiu A., Senz S., Harnagea C., Pignolet A., Hesse D., and Gösele U. J. Appl. Phys. 88 (2000) 6658
10. Garg A., Lloyd S.J., and Barber Z.H. Integr. Ferroelectr. 44 (2002) 1
11. Ma J.H., Meng X.J., Sun J.L., Lin T., Shi F.W., Wang G.S., and Chu J.H. Appl. Surf. Sci. 240 (2005) 275
12. Oh Y.N., and Yoon S.G. Appl. Surf. Sci. 227 (2004) 187
13. Aizawa K., Tokumitsu E., Okamoto K., and Ishiwara H. Appl. Phys. Lett. 76 (2000) 2609
14. Lu C.H., and Wen C.Y. J. Appl. Phys. 86 (1999) 6335
15. Kim W.J., Kim S.S., Jang K., Bae J.C., Song T.K., and Lee Y.I. J. Cryst. Growth 262 (2004) 327
16. Chen S.Y., Sun C.L., Chen S.B., and Chin A. Appl. Phys. Lett. 80 (2002) 3168
17. Pontes F.M., Pontes D.S.L., Leite E.R., and Longo E. J. Appl. Phys. 91 (2002) 6650
18. Chen H.D., Udayakumar K.R., Gaskey C.J., and Cross L.E. Appl. Phys. Lett. 67 (1995) 3411
19. Chon U., Shim J.S., and Jang H.M. J. Appl. Phys. 93 (2003) 4769
20. Watanabe H., Mihara T., Yoshimori H., and Paz de Araujo C.A. Jpn. J. Appl. Phys. 34 (1995) 5240