Structural and ferroelectric properties of (Bi,Ce) 4 Ti 3 O 12 thin films grown by pulsed laser deposition for ferroelectric random access memories

Applied Surface Science

Volumn 227, Issue 1-4, 2004, Pages 187-192

  Oh, Young Nam ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

(Bi,Ce) 4 Ti 3 O 12 thin films; Fatigue properties; P E hysteresis loops; Pulsed laser deposition

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; FILM GROWTH; OXYGEN; PLATINUM; PULSED LASER DEPOSITION; SILICA; SUBSTITUTION REACTIONS; SWITCHING; TITANIUM DIOXIDE;

(BI,CE)4TI3O12 THIN FILMS; FATIGUE PROPERTIES; P-E HYSTERESIS LOOPS;

THIN FILMS;

EID: 1842581595     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.11.064     Document Type: Article

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