Characterization of nanometer As-clusters in low-temperature grown GaAs by transient reflectivity measurements

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 2333-2336

  Korn, T ^a   Franke Wiekhorst, A ^a   Schnull S ^a   Wilke, I ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DRUDE MODELS; EXCITATION DENSITY; EXCITATION WAVELENGTH; EXPERIMENTAL STUDIES; GAAS; LATTICE TEMPERATURES; LOW-TEMPERATURE GROWN; QUANTITATIVE AGREEMENT; TRANSIENT REFLECTIVITY;

GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; TEMPERATURE;

REFLECTION;

EID: 33845427656     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430886     Document Type: Article

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