Influence of material growth and annealing conditions on recombination processes in low-temperature-grown GaAs

Optics Communications

Volumn 161, Issue 4, 1999, Pages 232-235

  Loka, Hany S ^a   Benjamin, Seldon D ^a   Smith, Peter W E ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LIGHT ABSORPTION; OPTICAL COMMUNICATION; OPTICAL PUMPING; PROCESS ENGINEERING; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; ULTRAFAST PHENOMENA;

LOW TEMPERATURE GROWN GALLIUM ARSENIDE; RECOMBINATION PROCESSES;

OPTICAL FIBERS;

EID: 0032684341     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0030-4018(99)00059-0     Document Type: Article

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