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Volumn 36, Issue 4 A, 1997, Pages 2144-2150

Spectral dependence of time-resolved photoreflectance of low-temperature-grown GaAs

Author keywords

Induced absorption; Low temperature grown GaAs; Photocarrier lifetime; Photoreflectance; Spectral dependence

Indexed keywords

TIME RESOLVED PHOTOREFLECTANCE;

EID: 0031117631     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2144     Document Type: Article
Times cited : (10)

References (31)
  • 20
    • 21544460057 scopus 로고
    • 2) and therefore the production of Ga on (100) GaAs occurs at temperatures above 775 K, which is about 502°C.
    • (1977) Surf. Sci. , vol.64 , pp. 293
    • Foxon, C.T.1    Joyce, B.A.2
  • 31
    • 85087248988 scopus 로고    scopus 로고
    • note
    • 22) This is comparable to the critical density at which wave-function overlapping starts to play a role.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.