Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2699-2702

  Cros, A ^a   Joshi, N V ^a   Smith, T ^b   Cantarero, A ^a   Martinez Criado G ^a   Ambacher, O ^c   Stutzmann, M ^d  

^a UNIVERSITY OF VALENCIA   (Spain)

^b RENISHAW PLC   (United Kingdom)

^c ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^d WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONFOCAL RAMAN; INVERSION DOMAIN BOUNDARIES; LATERAL DIRECTIONS; LOWER DENSITY; OPTICAL STUDY; STRUCTURAL QUALITIES; SYMMETRY CONSIDERATION;

RAMAN SCATTERING; RAMAN SPECTROSCOPY; SAPPHIRE; SPECTROSCOPIC ANALYSIS;

GALLIUM NITRIDE;

EID: 33845422336     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303533     Document Type: Conference Paper

References (19)

1. Gallium Nitride (GaN) II, edited by J. I. Pankove and T. D. Moustakas, Semiconductors and Semimetals, Vol. 57 (1999).
2. S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, Appl. Phys. Lett. 70, 420 (1997).
3. J. L. Rouviere, M. Arlery, B. Daudin, G. Feuillet, and O. Briot, Mater. Sci. Eng. B 50, 61 (1997).
4. K. M. Jones, P. Visconti, F. Yun, A. A. Baski, and H. Morkoç, Appl. Phys. Lett. 78, 2497 (2001).
5. V Potin, G Nouet, and P. Ruterana, Appl. Phys. Lett. 74, 947 (1999).
6. E. C. Piquette, P. M. Bridger, Z. Z. Bandic, and T. C. McGill, J. Vac. Sci. Tech. B 17, 1241 (1999).
7. J. E. Northrup, J. Neugebauer, and L. T. Romano, Phys. Rev. Lett. 77, 103 (1996).
8. L. T. Romano, J. E. Northrup, and M. A. O'Keefe, Appl. Phys. Lett. 69, 2394 (1996).
9. J. L. Weyher, F. D. Tichelaar, H. W. Zandbergen, L. Macht, and P. R. Hageman, J. Appl. Phys. 90, 6105 (2001).
10. G. Martinez-Criado, A. Cros, A. Cantarero, C. R. Miskys, O. Ambacher, R. Dimitrov, and M. Stutzmann, Mat. Sci. Eng. B 82, 200 (2001).
11. B. Pécz, Zs. Makkai, M. A. di Forte-Poisson, F. Huet, and R. E. Dunin-Borkowski, Appl. Phys. Lett. 78, 1529 (2001).
12. L. T. Romano and T. H. Myers, Appl. Phys. Lett. 71, 3486 (1997).
13. R. Dimitrov, V Tilak, M. Murphy, W. J. Schaff, L. F. Eastman, A. P. Lima, C. Miskys, O. Ambacher, and M. Stutzmann, Mater. Res. Soc. Symp. Proc. 622, T4.6.1 (2000).
14. P. J. Schuck, M. D. Mason, R. D. Grober, O. Ambacher, A. P. Lima, C. Miskys, R. Dimitrov, and M. Stutzmann, Appl. Phys. Lett. 79, 952 (2001).
15. G. Martinez-Criado, C. R. Miskys, A. Cros, A. Cantarero, O. Ambacher, and M. Stutzmann, phys. stat. sol. (b) 2, 497-500 (2001).
16. Ming S. Liu, Les A. Bursill, S. Prawer, K. W. Nugent, Y. Z. Tong, and G. Y. Zhang, Appl. Phys. Lett. 74, 3125 (1999).
17. A. Link, K. Bitzer, W. Limmer, R. Sauer, C. Kirchner, V Schwegler, M. Kamp, D. G. Ebling, and K. W. Benz, Appl. Phys. Lett. 86, 6256 (1999).
18. F. Demangeot, J. Frandon, M. A. Renucci, O. Briot, B. Gil, and R. L. Aulombard, Solid State Commun. 100, 207 (1996).
19. G. P. Dimitrakopulos, Ph. Komninou, J. Kioseoglou, Th. Kehagias, E. Sarigiannidou, A. Georgakilas, G. Nouet, and Th. Karakostas, Phys. Rev. B 64, 245325 (2001).