Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers

Materials Research Society Symposium-Proceedings

Volumn 622, Issue , 2000, Pages T461-T466

  Dimitrov, R ^a   Tilak, V ^a   Murphy, M ^a   Schaff, W J ^a   Eastman, L F ^a   Lima, A P ^b   Miskys, C ^b   Ambacher, O ^b   Stutzmann, M ^b  

^a Cornell University   (United States)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NUCLEATION; POLARIZATION; SAPPHIRE;

PLASMA-INDUCED MOLECULAR BEAM EPITAXY (PIMBE);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0034428508     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-622-t4.6.1     Document Type: Article

References (9)