Gas-source molecular beam epitaxial growth of SiGe alloy-based 'naked' quantum wells

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 81-85

  Kishimoto, Y ^a   Shiraki, Y ^b   Fukatsu, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Molecular beam epitaxial growth; Photoluminescence; Quantum well; SiGe

Indexed keywords

MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON ALLOYS;

GAS SOURCE MOLECULAR BEAM EPITAXIAL GROWTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032068487     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00452-0     Document Type: Article

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