New generation 1200V power module with trench gate IGBT and super soft recovery diode and its evaluations

IEE Proceedings: Electric Power Applications

Volumn 147, Issue 3, 2000, Pages 153-158

  Iwamoto, H ^a   Kawakami, A ^a   Satoh, K ^b   Takahashi, H ^b   Nakaoka, M ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DIODES; ELECTRIC SURGES; ENERGY DISSIPATION;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); REVERSE BIAS SAFE OPERATING AREA (RBSOA); SOFT RECOVERY DIODES;

POWER ELECTRONICS;

EID: 0033743269     PISSN: 13502352     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-epa:20000331     Document Type: Article

References (9)

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