Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 613-618

  Markevich, V P ^a   Peaker, A R ^a   Markevich, A V ^b   Litvinov, V V ^b   Murin, L I ^c   Emtsev, V V ^d  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

^c INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

Germanium; Interstitial; Irradiation; Oxygen defects

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRON IRRADIATION; ISOTHERMS; OXYGEN;

ISOTHERMAL ANNEALS; OXYGEN RELATED DEFECTS; POST IRRADIATION ISOCHRONAL; SELF INTERSTITIALS;

SEMICONDUCTING GERMANIUM;

EID: 33845296492     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.068     Document Type: Article

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