Characterization of atomic-beam deposited GeO1-xN x/HfO2 stacks on Ge

ECS Transactions

Volumn 1, Issue 5, 2006, Pages 9-16

  Houssa, M ^a   Conard, T ^a   Van Steenbergen, J ^a   Nicholas, G ^a   Mavrou, G ^b   Panayiotatos, Y ^b   Dimoulas, A ^b   Meuris, M ^a   Caymax, M ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC BEAMS; DEPOSITION; ENERGY GAP; LEAKAGE CURRENTS; TRANSISTORS;

BAND GAP; GATE STACK; OXIDE THICKNESS; TRANSISTOR FLOW;

GERMANIUM COMPOUNDS;

EID: 33845265027     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209250     Document Type: Conference Paper

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