High speed SOI CMOS image sensor with pinned photodiode on handle wafer

Microelectronics Journal

Volumn 38, Issue 1, 2007, Pages 102-107

  Cho, Yong Soo ^a   Takao, H ^b   Sawada, K ^b   Ishida, M ^b   Choi, Sie Young ^a  

^a Kyungpook National University   (South Korea)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Cis; High speed; Low dark current; Pinned photodiode; SOI CMOS image sensor

Indexed keywords

CMOS INTEGRATED CIRCUITS; IMAGE SENSORS; PHOTODIODES; PHOTOTRANSISTORS; QUANTUM EFFICIENCY; WSI CIRCUITS;

HANDLE WAFER; LOW DARK CURRENT; PINNED PHOTODIODE; PIXEL IMAGE SENSORS; WAVELENGTHS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33845221903     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.09.020     Document Type: Article

References (10)

1. Eric R. Fossum. IEEE Trans. Electron. Dev. 44 (1997) 1689-1698
2. Mendis S.K., Kemeny S.E., Gee R.C., Pain B., Staller C.O., Kim Q., and Fossum E.R. IEEE J. Solid-State Circuits 32 (1997) 187-197
3. Yonemoto K., and Sumi H. IEEE J. Solid-State Circuits 35 (2000) 2038-2043
4. Kwon H.I., Kang I.M., Park B.-G., Lee J.D., and Park S.S. IEEE Trans. Electron. Dev. 51 (2004) 178-184
5. Inoue I., Tanaka N., Yamashita H., Yamaguchi T., Ishiwata H., and Ihara H. IEEE Trans. Electron. Dev. 50 (2003) 43-47
6. Xu C., Zhang W., and Chan M. IEEE Trans. Electron. Dev. Lett. 22 (2001) 248-250
7. Afzalian A., and Flandre D. IEEE Trans. Electron. Dev. 50 (2003) 106-110
8. X. Zheng, S. Seshadri, M. Wood, C. Wrigley, B. Pain, IEEE CCD & AIS Workshop, Schloss-Elmau, May, 2003, pp. 101-102.
9. Colinge J.-P. Silicon-on-Insulator Technology: Materials to VLSI. 2nd ed (1991), Kluwer Academic Publishers, Boston p. 105
10. Iida Y., Oba E., Mabuchi K., Nakamura N., and Miura H. IEEE J. Solid-State Circuits 32 (1997) 2042-2046