GaN/AlN quantum dot photodetectors at 1.3-1.5 μm

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 262-267

  Doyennette, L ^a   Vardi, A ^b   Guillot, F ^c   Nevou, L ^a   Tchernycheva, M ^a   Lupu, A ^a   Colombelli, R ^a   Bahir, G ^b   Monroy, E ^c   Julien, F H ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c UNIV GRENOBLE ALPES   (France)

Author keywords

GaN AlN; Intraband absorption; Nitride; Photodetector; Quantum dots

Indexed keywords

ALUMINUM NITRIDE; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PHOTOCURRENTS; SEMICONDUCTOR QUANTUM DOTS;

CARRIER TRANSPORT; INTERDIGITATED CONTACTS; INTRABAND ABSORPTION; SELF ORGANIZED DOTS;

PHOTODETECTORS;

EID: 33845221402     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.09.017     Document Type: Article

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