Large area SiC substrates and epitaxial layers for high power semiconductor devices - An industrial perspective

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 195-200

  Muller St G ^a   Brady, M F ^a   Burk, A A ^a   Hobgood, H McD ^a   Jenny, J R ^a   Leonard, R T ^a   Malta, D P ^a   Powell, A R ^a   Sumakeris, J J ^a   Tsvetkov, V F ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); DOPING (ADDITIVES); EPITAXIAL GROWTH; OPTIMIZATION; SILICON COMPOUNDS; SUBLIMATION; THERMOELASTICITY;

HIGH POWER SEMICONDUCTOR DEVICES; INDUSTRIAL PRODUCTION; MICROPIPE DENSITIES; THERMOELASTIC STRESS;

SEMICONDUCTOR DEVICES;

EID: 33845212203     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.09.029     Document Type: Article

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