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Volumn 483-485, Issue , 2005, Pages
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Silicon Carbide and Related Materials 2004
[No Author Info available]
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
CRYSTAL DEFECTS;
DOPING (ADDITIVES);
EPITAXIAL GROWTH;
SINGLE CRYSTALS;
GAS PHASE COMPOSITION;
PHYSICAL VAPOR TRANSPORT;
TERNARY SOLUTION;
SILICON CARBIDE;
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EID: 85086679833
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: None Document Type: Conference Review |
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Times cited : (4)
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References (0)
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