Ab initio modeling of defect levels in Ge clusters and supercells

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 477-483

  Coutinho, J ^a   Torres, V J B ^a   Carvalho, A ^b   Jones, R ^b   Oberg S ^c   Briddon, P R ^d  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Defects; Germanium; Radiation; Vacancy

Indexed keywords

BOUNDARY CONDITIONS; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRON TRANSITIONS; PROBABILITY DENSITY FUNCTION;

BRILLOUIN ZONE; DIVACANCY; METALLIC DENSITY; VACANCY-DONOR PAIRS;

GERMANIUM;

EID: 33845209966     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.042     Document Type: Article

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