Studies of the VO centre in Ge using first principles cluster calculations

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 489-493

  Carvalho, A ^a   Jones, R ^a   Coutinho, J ^b   Shaw, M ^c   Torres, V J B ^b   Oberg S ^d   Briddon, P R ^c  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

^d LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Cluster; Defects; Diffusion; Electric levels; First principles; Germanium; Nudged elastic band; Oxygen; Vacancy

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC PROPERTIES; GOLD; PROBABILITY DENSITY FUNCTION;

ELECTRIC LEVELS; REORIENTATION ENERGIES; SUPERCELL LOCAL DENSITY FUNCTIONAL TREATMENTS; VACANCY-OXYGEN COMPLEX (VO);

ENERGY GAP;

EID: 33845210216     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.044     Document Type: Article

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