Calculation of deep carrier traps in a divacancy in germanium crystals

Applied Physics Letters

Volumn 88, Issue 9, 2006, Pages

  Coutinho, J ^a   Torres, V J B ^a   Jones, R ^b   Carvalho, A ^b   Oberg S ^c   Briddon, P R ^d  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC PROPERTIES; ELECTRON TRAPS; GERMANIUM; PROBABILITY DENSITY FUNCTION; PROTONS;

JAHN-TELLER DISTORTIONS; PROTON IMPLANTED MATERIAL;

CRYSTALS;

EID: 33644675163     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2181202     Document Type: Article

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