Compensation mechanisms and the response of high resistivity GaAs photoconductive switches during high-power applications

IEEE Transactions on Plasma Science

Volumn 28, Issue 5, 2000, Pages 1512-1519

  Islam, Naz E ^a   Schamiloglu, Edl ^a   Schoenberg, Jon S H ^b   Joshi, R P ^c  

^a University of New Mexico   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c Old Dominion University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ENCAPSULATION; INTERFACES (MATERIALS); MICROWAVE DEVICES; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DEEP DONOR DEEP ACCEPTOR; DEEP DONOR SHALLOW ACCEPTOR; FAST SEMICONDUCTOR SWITCHING; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; SHALLOW DONOR DEEP ACCEPTOR; ULTRA WIDE BAND MICROWAVE SOURCES;

SEMICONDUCTOR SWITCHES;

EID: 0034289902     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.901224     Document Type: Article

References (15)