Compact Circuit Model of GAN HFETs for Mixed Signal Circuits

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 143-148

  Conway, Adam ^a   Asbeck, Peter ^a   Jensen, Joseph ^b   Wong, Wah S ^b   Mokhtari, Mehran ^b   Moon, Jeong ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GALLIUM NITRIDE; INDUCTANCE;

MIXED SIGNAL CIRCUITS;

FIELD EFFECT TRANSISTORS;

EID: 0242365561     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Ando, Y., Contrata, W., Samato, N., Miyamoto, H., Matsunaga, K., Kuzuhara, M. Kunihiro, K., Kasahara, K., Nakayama, T., Takahashi, Y., hayama, N., and Ohno, Y. "Gate length scaling for Al/sub 0.2/Ga/sub 0.8/N/GaN HJFETs: two-dimensional full band Monte Carlo simulation including polarization effect." IEEE Transactions on Electron Devices, vol.47, (no.10), Oct. 2000, pp.1965-72.
2. Dambraine, G., Cappy, A., Heliodore, F., and Playez, E. "A new method for determining the FET small-signal equivalent circuit" IEEE Transactions on Microwave Theory and Techniques, vol.36, (no.7), July 1988. pp.1151-9.
3. Tu, R., Wann, C., King, J.C., Ko, P.K., and Hu, C. "An AC Conductance Technique for Measuring Slef-Heating in SOI MOSFET's" IEEE Electron Device Letters, vol. 16 (no. 10), Feb. 2, 1995, pp. 67-69.