Study of structure and photoluminescence properties of the ZnO thin film deposited by pulse laser deposition

Guangdianzi Jiguang/Journal of Optoelectronics Laser

Volumn 17, Issue 9, 2006, Pages 1065-1068

  Wang, Jing Jing ^a,b   Li, Qing Shan ^a   Chen, Da ^a   Kong, Xiang Gui ^c   Zheng, Xue Gang ^a   Zhang, Ning ^a   Zhao, Bo ^a  

^a QUFU NORMAL UNIVERSITY   (China)

^b SHANDONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

FWHM; Photoluminescence (PL); Pulse laser deposition (PLD); ZnO

Indexed keywords

CRYSTAL ORIENTATION; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DIFFRACTION PEAK; LUMINESCENCE INTENSITY; MICROSTRUCTURAL QUALITY;

ZINC OXIDE;

EID: 33751418541     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. Jin B J, Bae S H, Lee S Y, et al. Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition [J]. Mater Sci Engineering B, 2000, 871: 301-305.
2. XU Bu-heng, XUE Jun-ming, ZHAO Ying, et al. Research on ZnO thin films prepared by MOCVD for solar cells [J]. Journal of Optoelectronics·Laser, 2005, 16 (5): 515-518. (in Chinese)
3. WANG Fang, YANG Bao-he. Deposition and properties of highly c-oriented ZnO thin films for SAW devices [J]. Journal of Optoelectronics·Laser, 2005, 16 (1): 28-31. (in Chinese)
4. 4 thin films synthesized by pulsed laser deposition [J]. J Appl Phys, 2001, 90 (10): 5369-5375.
5. Sang Sub Kim, Byung-Teak Lee. Effects of oxygen pressure on the growth of pulsed laser deposited ZnO films on Si(001) [J]. Thin Solid Films, 2004, 446: 307-312.
6. Chen J J, Gao Y, Zeng F, et al. Effect of sputtering oxygen partial pressure on structure and physical propertyes of high resistiveity ZnO films [J]. Applied Surface Science, 2004, 223: 318-329.
7. Chen Y F, Bagnall D M, Koh H J, et al. Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J]. Journal of Applied Physics, 1998, 84 (7): 3912-3918.
8. LIN Bi-xia, FU Zhu-xi, LIAO Gui-hong. Effect of Zn/O on photoluminescence of ZnO on Si [J]. Chin J Lumin. 2005, 26 (2): 225-228. (in Chinese)
9. WANG Zhao-yang, HU Li-zhong, ZHAO Jie, et al. Effect of the variation of temperature on the structural and optical properties of ZnO thin films prepared on Si(111) substrates using PLD [J]. Vacuum, 2005, 78: 53-57.
10. Wang Y G, Lau S P, Lee H W, et al. Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air [J]. J Appl Phys, 2003, 94 (1): 354-358.
11. Vanheusden K, Seager C H, Warren W L, et al. Correlation between photoluminescence and oxygen vacancies in ZnO phosphors [J]. Appl Phys Lett, 1996, 68: 403-405.
12. Lin Guo, Yang S H, Yang C L, et al. Highly monodisperse polymer capped ZnO nanoparticles: preparation and optical properties [J]. J Appl Phys, 2000, 76: 2901-2903.