-
1
-
-
84932171847
-
Off-state mode TDDB reliability for ultra-thin gate oxides: New methodology and the impact of oxide thickness scaling
-
Phoenix, Arizona, USA
-
E. Wu, E. Nowak, and W. Lai, "Off-State Mode TDDB reliability for Ultra-thin gate Oxides: New methodology and the impact of oxide thickness scaling", Proceedings of IEEE - International Reliability Physics Symposium (IRPS), Phoenix, Arizona, USA, p. 84-94, 2004.
-
(2004)
Proceedings of IEEE - International Reliability Physics Symposium (IRPS)
, pp. 84-94
-
-
Wu, E.1
Nowak, E.2
Lai, W.3
-
2
-
-
84955286088
-
Growth and scaling of oxide conduction and breakdown
-
Dallas, Texas, USA
-
B. P. Linder, J. H. Stathis, D. J. Frank, S. Lombardo, and A. Vayshenker, "Growth and scaling of oxide conduction and breakdown", Proceedings of IEEE -IRPS, 2003, Dallas, Texas, USA, p. 402-405.
-
(2003)
Proceedings of IEEE -IRPS
, pp. 402-405
-
-
Linder, B.P.1
Stathis, J.H.2
Frank, D.J.3
Lombardo, S.4
Vayshenker, A.5
-
3
-
-
84955325122
-
Effect of gate oxide breakdown on RF devices and circuit performance
-
Dallas, Texas
-
H. Yang, J. S. Yuan, and E. Xiao, "Effect of gate oxide breakdown on RF devices and circuit performance", Proc. IEEE-International Reliability Physics Symposium, Dallas, Texas, 2003, p. 1-4
-
(2003)
Proc. IEEE-international Reliability Physics Symposium
, pp. 1-4
-
-
Yang, H.1
Yuan, J.S.2
Xiao, E.3
-
4
-
-
84955296083
-
Modelling and Experimental verification of the effect of gate oxide breakdown on CMOS inverters
-
Dallas, Texas
-
R. Rodriguez, J. H. Stathis, and B. P. Linder, "Modelling and Experimental verification of the effect of gate oxide breakdown on CMOS inverters", Proc. IEEE-International Reliability Physics Symposium, Dallas, Texas, 2003, p. 11-16
-
(2003)
Proc. IEEE-international Reliability Physics Symposium
, pp. 11-16
-
-
Rodriguez, R.1
Stathis, J.H.2
Linder, B.P.3
-
5
-
-
0036494245
-
Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
-
B.Kaczer, R. Degraeve, M. Rasras, K. Van De Mieroop, P. J. Roussel, G. Groeseneken, "Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability", IEEE - Trans. Electron Devices, Vol. 49, p. 500-506, 2002
-
(2002)
IEEE - Trans. Electron Devices
, vol.49
, pp. 500-506
-
-
Kaczer, B.1
Degraeve, R.2
Rasras, M.3
Van De Mieroop, K.4
Roussel, P.J.5
Groeseneken, G.6
-
6
-
-
2342516744
-
Collapse of MOSFET drain current after soft breakdown
-
March
-
A. Cester, A. Paccagnella, G. Ghidini, S. Deleonibus, and G. Guegan "Collapse of MOSFET Drain Current After Soft Breakdown", IEEE - Trans. Device Mater. Reliabil. Vol. 4, p. 63-72, March 2004
-
(2004)
IEEE - Trans. Device Mater. Reliabil.
, vol.4
, pp. 63-72
-
-
Cester, A.1
Paccagnella, A.2
Ghidini, G.3
Deleonibus, S.4
Guegan, G.5
-
7
-
-
84907705416
-
Degradation of Low Frequency Noise and DC characteristics on MOSFETs and its correlation with SILC
-
Lisbon, Portugal
-
L. Bandiera, A. Cester, S. Cimino, S. Gerardin, A. Paccagnella, and G. Ghidini, "Degradation of Low Frequency Noise and DC characteristics on MOSFETs and its correlation with SILC", Proceedings of European Solid-State Device Research Conference (ESSDERC), Lisbon, Portugal, p. 283-286
-
Proceedings of European Solid-State Device Research Conference (ESSDERC)
, pp. 283-286
-
-
Bandiera, L.1
Cester, A.2
Cimino, S.3
Gerardin, S.4
Paccagnella, A.5
Ghidini, G.6
-
8
-
-
84886448127
-
Ultra-thin gate dielectrics: They break down, but do they fail
-
B. E. Weir, P. J. Silverman, D. Monroe, K. S. Krisch, M. A. Alam, G. B. Alers, T. W. Sorch, G. L. Timp, F. Baumann, C. T. Liu, Y. Ma and D. Hwang, "Ultra-Thin Gate Dielectrics: They Break Down, But Do They Fail", Proceedings of IEEE - IEDM, 1997, p. 73-76.
-
(1997)
Proceedings of IEEE - IEDM
, pp. 73-76
-
-
Weir, B.E.1
Silverman, P.J.2
Monroe, D.3
Krisch, K.S.4
Alam, M.A.5
Alers, G.B.6
Sorch, T.W.7
Timp, G.L.8
Baumann, F.9
Liu, C.T.10
Ma, Y.11
Hwang, D.12
-
9
-
-
0033225411
-
Hot carrier degradation and time-dependent dielectric breakdown in oxides
-
G. Groeseneken, R. Degraeve, T. Nigam, G. Van den bosch, H.E. Maes, "Hot carrier degradation and time-dependent dielectric breakdown in oxides", Microelectronic Engineering, Vol. 49, pp. 27-40, 1999.
-
(1999)
Microelectronic Engineering
, vol.49
, pp. 27-40
-
-
Groeseneken, G.1
Degraeve, R.2
Nigam, T.3
Van Den Bosch, G.4
Maes, H.E.5
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