메뉴 건너뛰기




Volumn 2005, Issue , 2005, Pages 403-406

Modeling MOSFET and circuit degradation through SPICE

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; INTEGRATED CIRCUIT MANUFACTURE; MATHEMATICAL MODELS; PARAMETER ESTIMATION;

EID: 33751410328     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546670     Document Type: Conference Paper
Times cited : (3)

References (9)
  • 1
    • 84932171847 scopus 로고    scopus 로고
    • Off-state mode TDDB reliability for ultra-thin gate oxides: New methodology and the impact of oxide thickness scaling
    • Phoenix, Arizona, USA
    • E. Wu, E. Nowak, and W. Lai, "Off-State Mode TDDB reliability for Ultra-thin gate Oxides: New methodology and the impact of oxide thickness scaling", Proceedings of IEEE - International Reliability Physics Symposium (IRPS), Phoenix, Arizona, USA, p. 84-94, 2004.
    • (2004) Proceedings of IEEE - International Reliability Physics Symposium (IRPS) , pp. 84-94
    • Wu, E.1    Nowak, E.2    Lai, W.3
  • 4
    • 84955296083 scopus 로고    scopus 로고
    • Modelling and Experimental verification of the effect of gate oxide breakdown on CMOS inverters
    • Dallas, Texas
    • R. Rodriguez, J. H. Stathis, and B. P. Linder, "Modelling and Experimental verification of the effect of gate oxide breakdown on CMOS inverters", Proc. IEEE-International Reliability Physics Symposium, Dallas, Texas, 2003, p. 11-16
    • (2003) Proc. IEEE-international Reliability Physics Symposium , pp. 11-16
    • Rodriguez, R.1    Stathis, J.H.2    Linder, B.P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.