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Volumn , Issue , 2003, Pages 283-286

Degradation of low frequency noise and DC characteristics on MOSFETs and its correlation with SILC

Author keywords

[No Author keywords available]

Indexed keywords

DC CHARACTERISTICS; LOW-FREQUENCY NOISE; MOSFETS;

EID: 84907705416     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256869     Document Type: Conference Paper
Times cited : (1)

References (10)
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    • Characterization of the gate Si02 /Channel-Si interface in thin-gate Si02 MOSFETs by low frequency noise and charge pumping techniques
    • Nuremberg, Germany
    • A. Szewczyk, G. Ghibaudo, T. Ernst, C. Leroux, J.A. Chroboczek "Characterization of the gate Si02 /Channel-Si interface in thin-gate Si02 MOSFETs by low frequency noise and charge pumping techniques", ESSDERC 2001, Nuremberg, Germany, 2001.
    • (2001) ESSDERC 2001
    • Szewczyk, A.1    Ghibaudo, G.2    Ernst, T.3    Leroux, C.4    Chroboczek, J.A.5
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  • 7
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    • Hydrogen electrochemistry and stress induced leakage current in silica
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.