Built-in electric field effects on donor bound excitons in wurtzite InGaN strained coupled quantum dots

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 361, Issue 1-2, 2007, Pages 156-163

  Chi, Yue meng ^a   Shi, Jun jie ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Built in electric field; Donor bound exciton; Exciton binding energy; InGaN coupled quantum dots

Indexed keywords

BINDING ENERGY; EXCITONS; GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; NANOCRYSTALS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; ZINC SULFIDE;

BUILT-IN ELECTRIC FIELDS; COUPLED QUANTUM DOTS; DONOR-BOUND EXCITON; EFFECTIVE MASS APPROXIMATION; ELECTRONS AND HOLES; EXCITON-BINDING ENERGY; PIEZOELECTRIC POLARIZATIONS; STRUCTURAL PARAMETER;

ELECTRIC FIELD EFFECTS;

EID: 33751405615     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2006.09.038     Document Type: Article

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