Computation of the preferential nucleation sites for Ge quantum dots on a relaxed SiGe layer

Acta Materialia

Volumn 55, Issue 1, 2007, Pages 225-231

  Shin, Chansun ^a   Jin, Hyungha ^a   Chang, Joonyeon ^b   Kim, Hyungjun ^b   Kim, Wheung Whoe ^a  

^a Korea Atomic Energy Research Institute   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Atomic force microscopy; Dislocation theory; Quantum dots; Thin films

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ETCHING; NUCLEATION; SEMICONDUCTING GERMANIUM; STRAIN; THIN FILMS;

DISLOCATION THEORY; ENERGY DENSITY; LATTICE MISMATCH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33751396002     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2006.07.027     Document Type: Article

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