High power AlGaN/GaN HEMTs for wireless base station application

Device Research Conference - Conference Digest, DRC

Volumn 2005, Issue , 2005, Pages 173-176

  Joshin, K ^a   Kikkawa, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751345081     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2005.1553108     Document Type: Conference Paper

References (11)

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2. X. Z. Dang, R. J. Welty, D. Qiao, P. M. Asbeck, S. S. Lau, E. T. Yu, K. S. Boutros, and J. M. Redwing, "Fabrication and characterization of enhanced barrier AlGaN/GaN HFET," Electron. Lett., vol 35, pp. 602-603, 1999.
3. T. Kikkawa, N. Nagahara, N. Okamoto Y. Tateno, Y. Yamaguchi, N. Hara, K. Joshin, and P.M. Asbeck, "Surface-Charge-Controlled AlGaN/GaN-Power HFET without Current Collapse and Gm Dispersion," IEEE IEDM Tech. Dig., pp. 585-588, 2001.
4. M. Kanamura, T. Kikkawa, N. Adachi, T. Kimura, S. Yokogawa, M. Nagahara, N. Hara and K. Joshin, "AlGaN/GaN Power HEMTs Using Surface-Charge- Controlled Structure with Recessed Ohmic Technique," 2003 Extended Abstracts of Inter. Conf. Solid State Devices and Materials, pp. 916-917, 2003.
5. T. Kikkawa, T. Maniwa, H. Hayashi, M. Kanamura, S. Yokokawa, M. Nishi, N. Adachi, M. Yokoyam, Y. Tateno, and K. Joshin, "An Over 200-W Output Power GaN HEMT Push-Pull Amplifier with High Reliability," IEEE Int. Microwave Symp. Dig., pp. 1347-1350, 2004.
6. K. Joshin, T. Kikkawa, H. Hayashi, T. Maniwa, S. Yokokawa, M. Yokoyama, N. Adachi and M. Takikawa, "A 174 W High-Efficiency GaN HEMT Power Amplifier for W-CDMA Base Station Applications," IEEE IEDM Tech. Dig., pp. 983-985, 2003.
7. K. Shiojima and N. Shigekawa, "Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures," Jpn. J. Appl. Phys., Vol. 43, pp. 100-105, 2004.
8. S. Aralkumaran, M. Miyoshi, T. Egawa, B. Ishikawa and T. Jimbo, "Electrical Characteristics of AlGaN/GaN HEMTs on 4-in Diameter Sapphire Substrate," IEEE Electron Device Lett., vol. 24, pp.497-499, 2003.
9. T. Kikkawa, T. Igarashi, H. Haematsu, T. Tanaka, and Y. Otoki, "AlGaN/GaN HEMTs Fabricated on a 4-inch Substrate," 5th Int. Conf. on Nitride Semiconductors Tech. Dig., pp. 469, 2003.
10. T. Kikkawa and K. Joshin, "Highly-Reliable GaN HEMT Transmitter Amplifier with Output Power of Over 200 W for Wireless Base Station," 2004 Extended Abstracts of Inter. Conf. Solid State Devices and Materials, pp.320-321, 2004.
11. M. Kanamura, T. Kikkawa, and K. Joshin, "A 100 W High-Gain AlGaN/GaN HEMT Power Amplifier on a Conductive N-SiC Substrate for Wireless Base Station Applications," IEEE IEDM Tech. Dig., pp. 799-802, 2004.