Improved electrical and reliability performance of 65 nm interconnects with new barrier integration schemes

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2377-2380

  Delsol, R ^a   Jacquemin, J P ^a   Gregoire, M ^b   Girault, V ^b   Federspiel, X ^b   Bouyssou, R X ^b   Vannier, P ^b   Normandon, P ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

Author keywords

Barrier; Bilayer; Electro migration; Stress migration; Ta (N) Ta

Indexed keywords

ELECTRIC LINES; ELECTRIC RESISTANCE; ELECTROMIGRATION; ETCHING; RELIABILITY THEORY;

BARRIERS; BILAYERS; COPPER LINES; STRESS MIGRATION;

ELECTRIC POWER SYSTEM INTERCONNECTION;

EID: 33751326568     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.040     Document Type: Article

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