TaN/Ta bilayer barrier characteristics and integration for 90 and 65 nm nodes

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 613-617

  Jacquemin, J P ^a   Labonne, E ^b   Yalicheff, C ^b   Royet, E ^b   Vannier, P ^b   Delsol, R ^a   Normandon, P ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

Author keywords

Barrier; Bilayer; Characteristics; TaN Ta

Indexed keywords

DEPOSITION; DIFFUSION; ELECTRIC RESISTANCE; INTERCONNECTION NETWORKS; PARAMETER ESTIMATION; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

BARRIER; BILAYER; CHARACTERISTICS; TAN/TA;

TANTALUM COMPOUNDS;

EID: 28044472754     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.065     Document Type: Conference Paper

References (4)

1. Z.S. Yanovitskaya, A.V. Zverev, D. Shamiryan, and K. Maex Microelectr. Eng. 70 2003 363 367
2. C. Witt, and K. Pfeifer Mat. Res. Soc. Symp. Proc. 766 2003 115 119
3. D. Edelstein, C. Uzoh, C. Cabral, J.R.P. Dehaven, P. Buchwalter, A. Simon, E. Cooney, S. Malhotra, D. Klaus, H. Rathore, B. Aganvala, D. Nguyen, in: Interconnect Technology Conference, 2001, Proceedings of the IEEE 2001 International 4-6 June, 2001, pp. 9-11.
4. C.C. Chang, J.S. Chen, and W.S. Hsu J. Electrochem. Soc. 151 11 2004 G746 G750