Determination of thicknesses and interface roughnesses of GaAs-based and InAs/AlSb-based heterostructures by X-ray reflectometry

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 327-330

  Durand, O ^a   Berger, V ^a   Bisaro, R ^a   Bouchier, A ^a   De Rossi, A ^a   Marcadet, X ^a   Prevot I ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); REFLECTOMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; WAVEGUIDES; X RAY ANALYSIS;

X RAY REFLECTOMETRY;

HETEROJUNCTIONS;

EID: 0035247617     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00103-7     Document Type: Article

References (8)

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