Cohesive zone modelling of wafer bonding and fracture: Effect of patterning and toughness variations

Journal of Physics D: Applied Physics

Volumn 39, Issue 6, 2006, Pages 1050-1057

  Kubair, D V ^a   Spearing, S M ^b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK PROPAGATION; FRACTURE TOUGHNESS; MICROELECTROMECHANICAL DEVICES; MICROELECTRONICS; PATTERNMAKING; SURFACE ROUGHNESS;

BOND INTERFACE; COHESIVE ZONE MODELING; DIRECT WAFER BONDING; LOCAL SURFACE PROPERTY VARIATIONS; SEMICONDUCTOR MICROELECTRONICS COMPONENTS; SURFACE PREPARATION;

WSI CIRCUITS;

EID: 33751174317     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/6/009     Document Type: Article

References (21)

1. Ayon A A, Zhang X, Turner K T, Choi D, Miller B, Nagle S F and Spearing S M 2003 Characterization of silicon wafer bonding for power MEMS applications Sensors Actuators A 103 1-8
2. Bengtsson S, Ljunberg K and Vedde J 1996 The influence of wafer dimensions on the contact velocity in silicon wafer bonding Appl. Phys. Lett. 69 3381-3383
3. Conrad D, Scheerschmidt K and Gosele U 1996 Molecular simulations of silicon wafer bonding Appl. Phys. A 62 7-12
4. Geubelle P H and Rice J R 1995 A spectral scheme method for three-dimensional elastodynamic fracture problems J. Mech. Phys. Solids 11 1791-824
5. Gosele U, Hopfe S, Li S, Mack S, Martini T, Reiche M, Schmidt E and and Stenzel H 1995 What determines the lateral bonding speed in silicon wafer bonding? Appl. Phys. Lett. 67 863-5
6. Gui C, Elwenspoek M, Tas N and Gardeniers J G E 1999 Effect of surface roughness on direct wafer bonding J. Appl. Phys. 85 7448-54
7. Martini T, Steinkirchner J and Gosele U 1997 The crack opening method in silicon wafer bonding. How useful is it? J. Electrochem. Soc. 144 354-7
8. Maszara W P, Goetz G, Caviglia A and McKitterick B 1988 Bonding of silicon wafers on insulators J. Appl. Phys. 64 4943-50
9. Miki N and Spearing S M 2003 Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers. J. Appl. Phys. 94 6800-6
10. Miki N, Zhang X, Khanna R, Ayon A A, Ward D and Spearing S M. 2003 Multi-stack silicon-direct wafer bonding for 3D MEMS manufacturing Sensors Actuators, Part A, Phys. 103 194-201
11. Scheerschmidt K, Conrad D, Belov A and Gosele U 1997 Molecular dynamics modelling of silicon wafer bonding Comput. Mater. Sci. 9 108-15
12. Schmidt M A 1998 Wafer-to-wafer bonding for microstructure formation Proc. IEEE 86 1575-85
13. Tong Q Y and Gosele U 1999 Semiconductor Wafer Bonding: Science and Technology (New York: Wiley)
14. Tsau C H 2003 Fabrication and Characterization of wafer-level gold thermocompression bonding PhD Thesis Massachusetts Institute of Technology
15. Tsau C H, Spearing S M and Schmidt M A 2002 Fabrication of wafer-level thermocompression bonds J. Microelectromech. Syst. 11 641-7
16. Tsau C H, Spearing S M and Schmidt M A 2004 Characterization of wafer-level thermocompression bonds J. Microelectromech. Syst. 13 963-71
17. Turner K T 2004 Wafer bonding: mechanics-based models and experiments PhD Thesis Massachusetts Institute of Technology
18. Turner K T and Spearing S M 2002 modelling of direct wafer bonding: effect of wafer bow and etch patterns J. Appl. Phys. 92 7658-66
19. Turner K T and Spearing S M 2006 Mechanics of direct wafer bonding Proc. Royal Society of London, Ser. A, Math. Phys. Sci. 462 171-88
20. Turner K T, Spearing S M, Baylies W A, Robinson M and Smythe R 2005 Effect of nanotopography in direct wafer bonding: modelling and measurements IEEE Trans. Semiconductor Manuf. 18 289-96
21. Turner K T, Thouless M D and Spearing S M 2004 Mechanics of wafer bonding: effect of clamping J. Appl. Phys. 95 349-55