C-axis oriented MOCVD YMnO 3 thin film and its electrical characteristics in MFIS FeTRAM

Integrated Ferroelectrics

Volumn 68, Issue , 2004, Pages 75-84

  Kim, Daesig ^a   Klingensmith, David ^a   Dalton, David ^a   Olariu, Viorel ^a   Gnadinger, Fred ^a   Rahman, Mosiur ^b   Mahmud, Ali ^b   Kalkur, T S ^b  

^a COVA Technologies ^*  (United States)

^b University of Colorado at Colorado Springs   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYER; FERROELECTRIC TRANSISTOR RANDOM ACCESS MEMORY (FETRM); REMNANT POLARIZATION (PR); YTTRIUM MANGANATE (YMO);

ELECTRIC PROPERTIES; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; POLARIZATION; SILICON COMPOUNDS; YTTRIUM COMPOUNDS;

FERROELECTRIC THIN FILMS;

EID: 33751162846     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490895671     Document Type: Article

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