Retarded diffusion of phosphorus in silicon-on-insulator structures

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 2 B, 2000, Pages

  Uchida, Hideo ^a   Ieki, Yasushi ^a   Ichimura, Masaya ^a   Arai, Eisuke ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIFFUSION IN GASES; HIGH TEMPERATURE OPERATIONS; INTERFACES (MATERIALS); ION IMPLANTATION; MASKS; NITROGEN; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SOLID SOLUTIONS;

DIFFUSION RETARDATION; PREDEPOSITION DIFFUSION; SILICON ON INSULATOR STRUCTURE; SOLID SOLUBILITY; SPIN ON GLASS SOURCE; SURFACE CONCENTRATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0033872278     PISSN: 00214922     EISSN: None     Source Type: None    
DOI: 10.1143/JJAP.39.L137     Document Type: Article

References (11)