Recombination processes in SiGe/Si quantum wells measured by photoinduced absorption spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 24, 1997, Pages 15734-15739

  Dekel, E ^a   Ehrenfreund, E ^a   Gershoni, D ^a   Boucaud, P ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000585848     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.15734     Document Type: Article

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