A model for Fermi-level pinning in semiconductors: Radiation defects, interface boundaries

Physica B: Condensed Matter

Volumn 348, Issue 1-4, 2004, Pages 213-225

  Brudnyi, V N ^a   Grinyaev, S N ^a   Kolin, N G ^b  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

^b KARPOV INSTITUTE OF PHYSICAL CHEMISTRY   (Russian Federation)

Author keywords

Deep level; Fermi level pinning; Green function; Heteropair; Radiation effects; Schottky barrier

Indexed keywords

CRYSTAL LATTICES; ELECTRON IRRADIATION; GREEN'S FUNCTION; INTERFACES (MATERIALS); ION BOMBARDMENT; PLASTIC DEFORMATION; RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; THERMODYNAMICS;

DEEP LEVELS; FERMI-LEVEL PINNING; HETEROPAIRS; INTERFACE BOUNDARIES;

FERMI LEVEL;

EID: 1942485378     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.11.092     Document Type: Article

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