Growth, structure, and morphology of TiO2 films deposited by molecular beam epitaxy in pure ozone ambients

Microelectronics Journal

Volumn 37, Issue 12, 2006, Pages 1493-1497

  Fisher, Patrick ^a   Maksimov, Oleg ^b   Du, Hui ^a   Heydemann, Volker D ^b   Skowronski, Marek ^a   Salvador, Paul A ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

MBE; Thin film epitaxy; Titanium dioxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; HIGH ENERGY ELECTRON DIFFRACTION; IN SITU PROCESSING; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OZONE; SURFACES; THIN FILMS;

OZONE FLUX; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED); TEMPERATURE EFFUSION CELLS; THIN FILM EPITAXY;

TITANIUM DIOXIDE;

EID: 33750731271     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.05.010     Document Type: Article

References (23)

1. Jellison J.G.E., Modine F.A., and Boatner L.A. Opt. Lett. 22 (1997) 1808-1810
2. Hoffman M.R., Martin S.T., Choi W., and Bahnemann D.W. Chem. Rev. 95 (1995) 69-96
3. Linsebigler A.L., Lu G., John J., and Yates T. Chem. Rev. 95 (1995) 735-758
4. Koelsch M., Cassaignon S., Guillemoles J.F., and Olivet J.P. Thin Solid Films 403-404 (2002) 312-319
5. Hotsenspiller P.A.M., Wilson G.A., Roshko A., Rothman J.B., and Rohrer G.S. J. Cryst. Growth 166 (1996) 779-785
6. Burgess D.R., Hotsenspiller P.A.M., Anderson T.J., and Hohman J.L. J. Cryst. Growth 166 (1996) 763-768
7. Chang H.L.M., You H., Gao Y., Guo J., Foster C.M., Chiarello R.P., Zhang T.J., and Lam D.J. J. Mater. Res. 7 (1992) 2495-2506
8. Chambers S.A., Wang C.M., Thevuthasan S., Droubay T., McCready D.E., Lea A.S., Shutthanandan V., and Windisch J.C.F. Thin Solid Films 418 (2002) 197-210
9. Yamamoto S., Sumita T., Yamaki T., Miyashita A., and Naramoto H. J. Cryst. Growth 237-239 (2002) 569-573
10. Aoki T., Maki K., Tang Q., Kumagai Y., and Matsumoto S. J. Vacuum Sci. Technol. A 15 (1997) 2485-2488
11. Chen S., Mason M.G., Gysling H.J., Paz-Pujalt G.R., Blanton T.N., Castro T., Chen K.M., Fictorie C.P., Gladfelter W.L., Franciosi A., Cohen P.I., and Evans J.F. J. Vacuum Sci. Technol. A 11 (1993) 2419-2429
12. V.A. Burbure, P.A. Salvador, G.S. Rohrer, J. Am. Ceram. Soc. (2006), in press, Doi:10.1111/j.1551-2916.2006.01168.x.
13. Hansen P.J., Vaithyanathan V., Wu Y., Mates T., Heikman S., Mishra U.K., York R.A., Schlom D.G., and Speck J.S. J. Vacuum Sci. Technol. B 23 (2005) 499-506
14. Liu X., Chen X.Y., Yin J., Liu Z.G., Liu J.M., Yin X.B., and Chen G.X. J. Vacuum Sci. Technol. A 19 (2001) 391-393
15. Sugiharto, Yamamoto S., Sumita T., and Miyashita A. J. Phys. Condens. Matter 13 (2001) 2875-2881
16. Gao Y., Thevuthasan S., McCready D.E., and Engelhard M. J. Cryst. Growth 212 (2000) 178-190
17. Herman G.S., Gao Y., Tran T.T., and Osterwalder J. Surf. Sci. 447 (2000) 201-211
18. Kamei M., and Mitsuhashi T. Surf. Sci. 463 (2000) L609-L612
19. Haeni J.H., Theis C.D., Schlom D.G., Tian W., Pan X.Q., Chang H., Takeuchi I., and Xiang X.D. Appl. Phys. Lett. 78 (2001) 3292-3294
20. Gao W., Wang C.M., Wang H.Q., Henrich V.E., and Altman E.I. Surf. Sci. 559 (2004) 201-213
21. Coleman E., Siegrist T., Mixon D.A., Trevor P.L., and Trevor D.J. J. Vacuum Sci. Technol. A 9 (1991) 2408-2409
22. Leca V., Rjinders G., Koster G., Blank D.H.A., and Rogalla H. Mater. Res. Soc. Symp. Proc. 587 (2000) O3.6.1-O3.6.4
23. Asthagiri A., Niederberger C., Francis A.J., Porter L.M., Salvador P.A., and Sholl D.S. Surf. Sci. 537 (2003) 134-152