Structural and photo-luminescence properties of nanocrystalline silicon films deposited at low temperature by plasma-enhanced chemical vapor deposition

Applied Surface Science

Volumn 253, Issue 3, 2006, Pages 1198-1204

  Ali, Atif Mossad ^a   Inokuma, Takao ^b   Hasegawa, Seiichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

Author keywords

Defect properties; Dynamic pressure; H and F addition; Low temperature; Nanocrystalline silicon; Optical and structural properties; Photo luminescence; Plasma enhanced chemical vapor deposition (PECVD)

Indexed keywords

DEPOSITION; LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON;

DEFECT PROPERTIES; DYNAMIC PRESSURE; H / F ADDITION; NANOCRYSTALLINE SILICON FILMS;

THIN FILMS;

EID: 33750717175     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.01.064     Document Type: Article

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